submit news    HOME | FEEDBACK  


« NAVIGATION »
NEWS

- Bio/Medicine

- Chemicals

- Defense

- Drug Delivery

- Education

- Electronics

- Energy

- Events

- Grants

- Industry

- Investment

- Litigation

- Materials

- MEMS

- Nanofabrication

- Nanoparticles

- Nanotubes

- Optics

- Partnership

- Patent

- Products

- Quantum dots

- Research

- Smart Dust

- Software
COMPANIES
EVENTS

- Browse by Month

- Current Shows

- Previous Shows

- Submit Events
FEEDBACK
ADVERTISE
LINK TO US

« PARTNERS »
Become A Nanotechwire Partner

FEI Company

Veeco Instruments

Nano Science and Technology Institute

National Nanotechnology Initiative

Nanotechnology at Zyvex

Want to see your Company or Organization listed above? Become A Nanotechwire Partner Today - click here
« NEWSLETTER »



« SEARCH »







1/30/2009 6:41:38 PM
Samsung Develops World’s Highest Density DRAM Chip (Low-power 4Gb DDR3) using 50 nanometer (nm) process technology

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has made a significant advancement in the push for higher volume memory chips by developing the world’s first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology.

With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 has become critical in reducing data center costs, improving server time management and increasing overall efficiency.

For the new generation of “green” servers, the 4Gb DDR3’s high density combined with its lower level of power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.

“We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc. “By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market,” he added.

The 4Gb DDR3 can be produced in 16 gigabyte (GB) registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32GB – offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.

Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts (V), therein improving its throughput by 20 percent over a 1.5V DDR3. Its maximum speed is 1.6 gigabits per second (Gbps).

In 16GB module configurations, 4Gb DDR3 can consume 40 percent less power than 2Gb DDR3 because of its higher density and because it uses only half the DRAM (32 vs. 64 chips).

With an aggressive conversion to 50nm-class production for higher density DDR3, Samsung intends to remain the clear leader in high-volume/high-performance DRAM.

In September 2008, Samsung announced its development of the world’s first 50 nm-class 2Gb DDR3 DRAM. Now, just five months after, it has established the industry’s broadest line-up of high-performance DDR3 products using 50 nm-class process technology (4Gb, 2Gb, 1Gb).

As forecasts have the amount of memory per server doubling every two years, the development of high-density DRAM is expected to keep pace, expanding to other applications such as notebooks and desktop PCs.

According to the International Data Corporation (IDC), a market research and analysis firm, the worldwide DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three percent of the total DRAM market in 2009 and 33 percent in 2011 (units in bits).

http://www.samsung.com

Other Headlines from Samsung Electronics ...
 - Samsung Offers Industry’s First 64-gigabit MLC NAND Flash, Using Toggle DDR 2.0 Interface
 - Samsung Selects Veeco MOCVD System for Advanced GaN-Based Power Electronics Research
 - IBM and Samsung Announce Joint Research into New Semiconductor Technology
 - Unidym Announces Alliance with Samsung Electronics
 - Arrowhead CEO Provides Perspective on $4.5 million Alliance Between Subsidiary Unidym and Samsung Electronics

More Electronics Headlines ...
 - Nanosys Unlocks Full Color LCD Viewing Experience with Nanotechnology
 - NUS and A*STAR Launch Research Programmes in New Growth Area of Green Electronics
 - Full-Color Quantum Dot LED (QLED) Displays Move Closer to Reality, as QD Vision Achieves Significant Efficiency and Performance Improvements
 - "Computer synapse" analyzed at the nanoscale
 - Pentagonal tiles pave the way towards organic electronics


« Back To List »

« GET LISTED »
- submit company
- submit news
- submit events
- advertise here

« EVENTS »
- More Events


Copyright © 2014 Nanotechwire.com | Privacy Policy |